Electrical Stability of p-Channel Feedback Field-Effect Transistors Under Bias Stresses

نویسندگان

چکیده

In this study, we examined electrical stability of the p-channel feedback field-effect transistors (FBFETs) under negative bias stress (NBS) and positive (PBS). The intact FBFETs have a subthreshold swing (SS) 0.12 mV/dec, an on-current ~10-4 A, threshold voltage (VTH) -0.76 V. There is negligible change in SS when are stressed by gate-bias corresponding to electric field 5.4 MV/cm across gate oxide. On other hand, as duration increases 1000 s, VTH shifts -0.89 V -0.67 for NBS PBS, respectively. was recovered over 83% at recovery ±5 stabilities PBS discussed study.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Variable Temperature Mobility Analysis of n-Channel, p-Channel, and Ambipolar Organic Field-Effect Transistors

DOI: 10.1002/adfm.200900831 The temperature dependence of field-effect transistor (FET)mobility is analyzed for a series of n-channel, p-channel, and ambipolar organic semiconductorbased FETs selected for varied semiconductor structural and device characteristics. The materials (and dominant carrier type) studied are 5,5000bis(perfluorophenacyl)-2,20:50,200:500,2000-quaterthiophene (1, n-channe...

متن کامل

InxGa1-xSb channel p-metal-oxide-semiconductor field effect transistors: Effect of strain and heterostructure design

InxGa1-xSb is an attractive candidate for high performance III-V p-metal-oxide-semiconductor field effect transistors (pMOSFETs) due to its high bulk hole mobility that can be further enhanced with the use of strain. We fabricate and study InxGa1 xSb-channel pMOSFETs with atomic layer deposition Al2O3 dielectric and self-aligned source/drain formed by ion implantation. The effects of strain and...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: IEEE Access

سال: 2021

ISSN: ['2169-3536']

DOI: https://doi.org/10.1109/access.2021.3108232